P-DIAMOND N-GAAS JUNCTIONS FORMED BY DIRECT BONDING/

Authors
SUGINO T ITAGAKI T SHIRAFUJI J
Citation
T. Sugino et al., P-DIAMOND N-GAAS JUNCTIONS FORMED BY DIRECT BONDING/, Electronics Letters, 32(1), 1996, pp. 71-73
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
1
Year of publication
1996
Pages
71 - 73
Database
ISI
SICI code
0013-5194(1996)32:1<71:PNJFBD>2.0.ZU;2-0
Abstract
The direct bonding of an n-GaAs thin film onto the surface of epitaxia l p-diamond is demonstrated. A rectifying characteristic is obtained f or the present p-diamond/n-GaAs bonded junction system. Moreover, the occurrence of the photovoltaic effect at the junction is observed unde r illumination by an AlGaAs laser operated at 789nm. A diamond/GaAs pn junction can be formed by direct bonding.