EFFECT OF HIGH-CONDUCTIVITY BARRIERS ON DENDRITE DEVELOPMENT IN A DIELECTRIC

Citation
Di. Karpov et al., EFFECT OF HIGH-CONDUCTIVITY BARRIERS ON DENDRITE DEVELOPMENT IN A DIELECTRIC, ELECTRICAL TECHNOLOGY, (3), 1995, pp. 33-38
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
09655433
Issue
3
Year of publication
1995
Pages
33 - 38
Database
ISI
SICI code
0965-5433(1995):3<33:EOHBOD>2.0.ZU;2-Y
Abstract
Computer simulation has been used to study the influence of high-condu ctivity barriers on discharge development in a condenser dielectric. T he studies were carried out by means of a modified fracture breakdown model; the results obtained are compared with experimental data. Dendr ite formation can be characterized by the relationships between the sp ecific times of dendrite growth tau(d) and charge relaxation in the ba rrier tau(b) and in discharge channels tau(c). Application of a barrie r with tau(b) less than or equal to tau(d) is shown to be more efficie nt.