IMPROVED AIRY FUNCTION FORMALISM FOR STUDY OF RESONANT-TUNNELING IN MULTIBARRIER SEMICONDUCTOR HETEROSTRUCTURES

We show that our exact one-dimensional Airy function formalism for stu dying electron resonant tunneling in multibarrier semiconductor hetero structures is an improvement on a previous calculation of Brennan and Summers [J. Appl. Phys. 61, 614 (1987)]. We also clearly demonstrate t hat our method gives better agreement with the numerical approach of V assell, Lee, and Lockwood [J. Appl. Phys. 54, 5206 (1983)] in calculat ing the transmission coefficient T(E) and current density J(E) for mul tibarrier semiconductor heterostructures. (C) 1996 American Institute of Physics.