HIGH-FREQUENCY CAPACITANCE OF BIPOLAR RESONANT-TUNNELING DIODES

The high-frequency characteristics of bipolar resonant tunneling diode s are experimentally investigated at room temperature. The electron ac cumulation and discharging in these resonant tunneling light-emitting diodes are studied at frequencies up to 35 GHz. The experiments show c apacitance peaks due to electron charge disappearing from the quantum well. The measurements are found to be in agreement with our theoretic al model for the calculation of the high-frequency characteristics of resonant tunneling devices. The high-frequency characteristics of the bipolar light-emitting resonant tunneling diode are compared to the un ipolar resonant tunneling diode and the resonant interband tunneling d iode. The comparison shows a similar discharging characteristic of the quantum well, but a different overall variation of the capacitance. ( C) 1996 American Institute of Physics.