CHEMICAL-BEAM-EPITAXY GROWTH OF INDIUM-CONTAINING III-V COMPOUNDS USING TRIISOPROPYLINDIUM

Triisopropyl indium (TIPIn) has been investigated as an alternative to trimethyl indium for use in chemical-beam epitaxy (CBE). In previous CBE studies of GaAs/AlGaAs growth, the replacement of methyl-containin g precursors with ethyl- and isopropyl-containing precursors has been shown both to widen the substrate temperature window available for gro wth, and also to reduce unintentional carbon incorporation in the grow n layers. In the present study of (100)InxGa1-xAs (0 less than or equa l to x less than or equal to 0.1) growth using the new TIPIn source, i n situ modulated-beam mass spectrometry studies have demonstrated a si milar, and technologically very important, widening of the substrate t emperature window. Furthermore, use of the new precursor combination, TIPIn and triisopropyl gallium, is also shown to generate state-of-the -art InGaAs material with electrical and optical properties directly c omparable to corresponding material grown using molecular-beam epitaxy . (C) 1996 American Institute of Physics.