BAND OFFSETS IN ZN1-XCDXSE ZNSE MULTIPLE-QUANTUM WELLS/

The conduction-band discontinuity in Zn1-xCdxSe/ZnSe multiple-quantum- well structures grown by molecular-beam epitaxy and pseudomorphically strained to ZnSe were evaluated via electrical and intersubband absorp tion measurements for 0.23 less than or equal to x less than or equal to 0.33. A variation between 165 +/- 14 and 253 +/- 14 meV is found in the cadmium concentrations range analyzed. Our results are consistent with a valence-band contribution to the band-gap difference Q(v) = 0. 33 +/- 0.03 in the alloy series. (C) 1996 American Institute of Physic s.