ELECTRON-BEAM DEPOSITED LEAD-LANTHANUM-ZIRCONATE-TITANATE THIN-FILMS FOR SILICON-BASED DEVICE APPLICATIONS

A simple single-source electron-beam evaporation technique has been us ed for the deposition of le ad-lanthanum-zircon ate-titanate (PLZT) th in films for silicon-based device applications. An optimized annealing condition has been established for the formation of crystalline perov skite phases. The effect of the bottom electrodes and the barrier laye r on the growth of the films has been studied. Films with good dielect ric and optical properties have been obtained under optimized conditio ns. Electrical properties of the films have been evaluated using metal -insulator-semiconductor and metal-insulator-metal structures. A moder ately low interface trap density and very low leakage current density demonstrate the potential of the deposited films for device applicatio ns. (C) 1996 American Institute of Physics.