EFFECT OF B-SITE CATION STOICHIOMETRY ON ELECTRICAL FATIGUE OF RUO2 PB(ZRXTI1-X)O-3/RUO2 CAPACITORS/

Citation
Hn. Alshareef et al., EFFECT OF B-SITE CATION STOICHIOMETRY ON ELECTRICAL FATIGUE OF RUO2 PB(ZRXTI1-X)O-3/RUO2 CAPACITORS/, Journal of applied physics, 79(2), 1996, pp. 1013-1016
Citations number
25
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
79
Issue
2
Year of publication
1996
Pages
1013 - 1016
Database
ISI
SICI code
0021-8979(1996)79:2<1013:EOBCSO>2.0.ZU;2-U
Abstract
There have been numerous reports that Pb(ZrxTi1-x)O-3 (PZT) thin-film capacitors with RuO2 electrodes and compositions near the morphotropic phase boundary exhibit minimal decrease in switched polarization with electric-field cycling. We show thar. the fatigue performance of RuO2 //PZT//RuO2 capacitors strongly depends on PZT film composition. Speci fically, we demonstrate that the rate of polarization fatigue increase s with increasing Ti content for PZT thin films of tetragonal crystal symmetry deposited on RuO2 electrodes. As the Ti content of the PZT fi lms increased, the film gain morphology changed from columnar to granu lar and the volume percent of a fluorite-type second phase decreased. These microstructural trends and the possibility that the electrode ma terial acts as a sink for oxygen vacancies are discussed to explain th e fatigue dependence on B-site cation ratio for PZT films with RuO2 el ectrodes. (C) 1996 American institute of Physics.