Dp. Chu et al., THEORETICAL INVESTIGATION OF COSI2 SI1-XGEX DETECTORS - INFLUENCE OF A SI TUNNELING BARRIER ON THE ELECTROOPTICAL CHARACTERISTICS/, Journal of applied physics, 79(2), 1996, pp. 1151-1156
We present a theoretical investigation of the influence of a non-react
ed Si layer on the transport and optical properties of CoSi2/Si1-xGex
Schottky barrier diodes grown from Co/Si/Si1-xGex systems. The presenc
e of this layer reduces the effect of the lowering of the Schottky bar
rier height which would be expected in a CoSi2/Si1-xGex. However, due
to the small thickness of this Si layer, the charge carriers are able
to tunnel through it. This tunneling process allows for a significant
lowering of the Schottky barrier height and therefore an extension of
the detection regime into the infrared. (C) 1996 American Institute of
Physics.