THEORETICAL INVESTIGATION OF COSI2 SI1-XGEX DETECTORS - INFLUENCE OF A SI TUNNELING BARRIER ON THE ELECTROOPTICAL CHARACTERISTICS/

We present a theoretical investigation of the influence of a non-react ed Si layer on the transport and optical properties of CoSi2/Si1-xGex Schottky barrier diodes grown from Co/Si/Si1-xGex systems. The presenc e of this layer reduces the effect of the lowering of the Schottky bar rier height which would be expected in a CoSi2/Si1-xGex. However, due to the small thickness of this Si layer, the charge carriers are able to tunnel through it. This tunneling process allows for a significant lowering of the Schottky barrier height and therefore an extension of the detection regime into the infrared. (C) 1996 American Institute of Physics.