TIME-RESOLVED EMISSION STUDIES OF GAAS ALGAAS LASER-DIODE ARRAYS ON DIFFERENT HEAT SINKS/

Laser radiation from GaAs/AlGaAs laser diode arrays of high output pow er is studied during nano-to millisecond carrier injection in temporal ly and spectrally resolved emission measurements. A red shift of the m ultimode emission spectrum by up to 12 nm and a concomitant increase o f the total bandwidth are caused by a transient rise of the device tem perature by up to 50 K. Spatially resolved experiments reveal a latera l temperature difference of about 2 K between the center and the edge emitters. Different laser array/heat sink combinations are investigate d in order to reduce the transient temperature increase. (C) 1996 Amer ican Institute of Physics.