Interfacial reactions in annealed Ni90Ti10 alloy thin films deposited
on Si(100) were studied. The investigation was carried out by Auger el
ectron spectroscopy, x-ray diffraction, and transmission electron micr
oscopy combined with energy dispersive x-ray spectroscopy. Well define
d phase separation was observed in the reaction zone. The first layer,
adjacent to the Si substrate, contains Ni silicide, the second layer
is most probably composed of the ternary Ni-Ti-Si compound. (C) 1996 A
merican Institute of Physics.