INTERACTION BETWEEN NI90TI10 ALLOY THIN-FILM AND SI SINGLE-CRYSTAL

Citation
M. Levit et al., INTERACTION BETWEEN NI90TI10 ALLOY THIN-FILM AND SI SINGLE-CRYSTAL, Journal of applied physics, 79(2), 1996, pp. 1179-1181
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
79
Issue
2
Year of publication
1996
Pages
1179 - 1181
Database
ISI
SICI code
0021-8979(1996)79:2<1179:IBNATA>2.0.ZU;2-1
Abstract
Interfacial reactions in annealed Ni90Ti10 alloy thin films deposited on Si(100) were studied. The investigation was carried out by Auger el ectron spectroscopy, x-ray diffraction, and transmission electron micr oscopy combined with energy dispersive x-ray spectroscopy. Well define d phase separation was observed in the reaction zone. The first layer, adjacent to the Si substrate, contains Ni silicide, the second layer is most probably composed of the ternary Ni-Ti-Si compound. (C) 1996 A merican Institute of Physics.