LOW-TEMPERATURE PHOTOLUMINESCENCE OF TE-DOPED GASB GROWN BY LIQUID-PHASE ELECTROEPITAXY (VOL 77, PG 5902, 1995)

Citation
S. Iyer et al., LOW-TEMPERATURE PHOTOLUMINESCENCE OF TE-DOPED GASB GROWN BY LIQUID-PHASE ELECTROEPITAXY (VOL 77, PG 5902, 1995), Journal of applied physics, 79(2), 1996, pp. 1185-1185
Citations number
1
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
79
Issue
2
Year of publication
1996
Pages
1185 - 1185
Database
ISI
SICI code
0021-8979(1996)79:2<1185:LPOTGG>2.0.ZU;2-5