OPTICAL MEASUREMENTS IN MOVPE-GROWN ZNSE INP EPILAYERS/

Authors
COQUILLAT D BOUCHARA D ABOUNADI A RIBAYROL A LASCARAY JP CALAS J HAIDOUX A TOMASINI P TEDENAC JC MAURIN M
Citation
D. Coquillat et al., OPTICAL MEASUREMENTS IN MOVPE-GROWN ZNSE INP EPILAYERS/, Physica status solidi. b, Basic research, 180(2), 1993, pp. 383-389
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
180
Issue
2
Year of publication
1993
Pages
383 - 389
Database
ISI
SICI code
0370-1972(1993)180:2<383:OMIMZI>2.0.ZU;2-A
Abstract
The X-ray diffraction pattern of MOVPE-grown ZnSe/InP epilayers in the thickness range between 0.15 and 2.2 mum shows that the relaxation is obtained for a few monolayers. The splitting between light hole E(lh) and heavy hole E(hh) excitonic transitions is observed at 4.2 K by re flectivity and is explained in terms of thermoelastic strain due to th e difference in the thermal expansion coefficients of layer and substr ate. In addition photoluminescence is studied and shows neutral-donor- bound-exciton lines I2 and I2' as well as the neutral-acceptor-bound-e xciton line I1.