EFFECTS OF LATENT TRACKS FORMED BY HIGH-ENERGY ION-IMPLANTATION IN CRYSTALS

The influence of various effects inherent to the high-energy ion bomba rdment of crystals on the latent track. formation is treated. The natu re of tracks is dependent on a type of solids. The relaxation of stron g electron excitation which occurs under irradiation of materials by e nergetic ions is the main parameter which defines the nature of track regions. The track migration of implanted atoms as well as track chann eling of incident ions is discussed for ion implantation in semiconduc tors.