S-PARAMETER EXTRACTION OF TRANSISTORS UNDER CLASS-C BIAS

Authors
TSANG KF MORGAN GB YIP PCL
Citation
Kf. Tsang et al., S-PARAMETER EXTRACTION OF TRANSISTORS UNDER CLASS-C BIAS, Microwave and optical technology letters, 11(2), 1996, pp. 95-98
Citations number
4
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
11
Issue
2
Year of publication
1996
Pages
95 - 98
Database
ISI
SICI code
0895-2477(1996)11:2<95:SEOTUC>2.0.ZU;2-H
Abstract
A novel technique for extracting the large-signal S parameters of a bi polar transistor under class-c bias has been developed. To verify, the applicability of the developed technique an amplifier at 870 MHz was implemented. Experimental results showed that the amplifier performanc e was close to prediction. (C) 1996 John Wiley & Sons, Inc.