DETAILED COMPUTER-SIMULATION OF ION-IMPLANTATION PROCESSES INTO CRYSTALS

A modified version of the binary collision computer code Marlowe that can deal with low energy implant simulations is presented. In this ver sion the trajectories of the particles are calculated by numerically s olving their equations of motion instead of simply using the asymptote s, which is the usual approach. The model has been applied to the simu lation of 0.5 keV boron implants into amorphous and crystalline silico n. The agreement with the experimental secondary ion mass spectrometry profiles is better than that obtained using the asymptotic approximat ion. (C) 1995 The Institute of Materials.