ELECTRICAL AND OPTICAL CHARACTERIZATION OF SILICON AND SILICON PHOSPHORUS IMPLANTS IN INP DOPED WITH IRON

Silicon implantations into semi-insulating InP with a wide range of do ses and energies have been carried out with the aim of obtaining n typ e layers suitable for device applications. The electrical activations obtained were typically about 70%, reaching 80% for Si/P co-implants w ith a dose of 10(14) cm(-2), and the electrical depth profiles showed no redistribution of the implants during annealing. The mobilities obt ained after all rapid thermal annealing cycles used were very high, in dicating the good crystalline quality of the resulting layers. This wa s confirmed by Raman scattering measurements, which showed that even i f the material is completely amorphised by the implantation, the annea ling treatment restores the emissions found for as received unimplante d InP. After Si implantation, the photoluminescence spectrum of the sa mples showed the appearance of a band at 1.17 eV with high thermal sta bility, the origin of which was tentatively assigned to v(p)-Si-p (P v acancy-Si on P lattice site) complexes. (C) 1995 The Institute of Mate rials.