ANOMALOUS PHOTOVOLTAGE IN CD0.25ZN0.75TE THIN-FILMS

Citation
B. Samanta et al., ANOMALOUS PHOTOVOLTAGE IN CD0.25ZN0.75TE THIN-FILMS, Journal of physics. D, Applied physics, 29(1), 1996, pp. 188-194
Citations number
22
Categorie Soggetti
Physics, Applied
ISSN journal
00223727
Volume
29
Issue
1
Year of publication
1996
Pages
188 - 194
Database
ISI
SICI code
0022-3727(1996)29:1<188:APICT>2.0.ZU;2-J
Abstract
Anomalous photovoltage in polycrystalline Cd0.25Zn0.75Te thin films ha s been studied. The effect is described as a combined effect of mainly p-p(+) junctions at the grain boundaries and surface band bending apa rt from other factors. A new method has been developed to enhance the photovoltage by placing a fine mesh in front of the substrate during t he film deposition. This enhancement of photovoltage is explained with the help of a trap-induced space-charge model.