THE MODEL OF DIODE PERCOLATION FOR THE VO RTEX FLOW IN A RESISTIVE STATE OF HTSC FILMS

Citation
Aa. Snarskii et al., THE MODEL OF DIODE PERCOLATION FOR THE VO RTEX FLOW IN A RESISTIVE STATE OF HTSC FILMS, Fizika nizkih temperatur, 21(9), 1995, pp. 917-923
Citations number
35
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
01326414
Volume
21
Issue
9
Year of publication
1995
Pages
917 - 923
Database
ISI
SICI code
0132-6414(1995)21:9<917:TMODPF>2.0.ZU;2-5
Abstract
We propose a theoretical explanation of the behaviour of the current-v oltage characteristics (CVC) in the resistive state of HTSC films. Unl ike the exponential behaviour of low temperature superconductors, this CVC follows the power law. The model of the 2D structure is proposed for the diode percolation of the vortex depinning process in a thin fi lm and layered superconductors. which has persistent distribution of t he pinning forces. The universal critical index gamma is calculated fo r this model of resistive state of the power law CVC E similar to (j - j(c))(gamma.) The index is a combination of the critical indexes for the correlated length nu(perpendicular to) and t(+) for the conductivi ty in 2D diode percolated structures. It is equal to gamma = 2 nu(perp endicular to) - t(+). The theoretical value of index gamma = 1.6 is in areasonable agreement with the recently obtained experimental values of gamma.