FREQUENCY-DEPENDENT ADMITTANCE OF SCHOTTKY BARRIERS AT THE ALUMINUM POLY(3-METHYLTHIOPHENE) INTERFACE

Authors
GOMES HL TAYLOR DM
Citation
Hl. Gomes et Dm. Taylor, FREQUENCY-DEPENDENT ADMITTANCE OF SCHOTTKY BARRIERS AT THE ALUMINUM POLY(3-METHYLTHIOPHENE) INTERFACE, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 234, 1993, pp. 691-696
Citations number
4
Categorie Soggetti
Crystallography
Journal title
Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals → ACNP
ISSN journal
1058725X
Volume
234
Year of publication
1993
Pages
691 - 696
Database
ISI
SICI code
1058-725X(1993)234:<691:FAOSBA>2.0.ZU;2-0
Abstract
AC admittance measurements have been made from 10 Hz to 1 MHz so as to establish the conditions under which reasonable estimates of dopant d ensity and diffusion potential may be made from C-V measurements. Cole -Cole plots are shown to provide a means of characterising devices in terms of the spread in their relaxation times. The effects of thermal annealing on device parameters are described.