THE DENSITY OF GAP STATES OF SPUTTERED A-SI-H STUDIED BY THE SPACE-CHARGE-LIMITED CURRENT TECHNIQUE

Authors
ELMONGY AA
Citation
Aa. Elmongy, THE DENSITY OF GAP STATES OF SPUTTERED A-SI-H STUDIED BY THE SPACE-CHARGE-LIMITED CURRENT TECHNIQUE, Indian Journal of Pure & Applied Physics, 34(2), 1996, pp. 83-88
Citations number
23
Categorie Soggetti
Physics
Journal title
Indian Journal of Pure & Applied Physics → ACNP
ISSN journal
00195596
Volume
34
Issue
2
Year of publication
1996
Pages
83 - 88
Database
ISI
SICI code
0019-5596(1996)34:2<83:TDOGSO>2.0.ZU;2-4
Abstract
RF magnetron sputtered films of different thicknesses were prepared an d the density of states N(E), was determined by measuring space-charge -limited currents. The study showed that space charges were trapped fa r away from Fermi level and our best film gave N(E) value of 9x10(14) eV(-1)cm(-3) with slight increase with the local shift in the quasi Fe rmi level. The results are explained in terms of step model, in which the current-voltage characteristics depend strongly on temperature.