PHASE-TRANSITION IN PB4.95BA0.05GE3-XSIXO11 FERROELECTRIC

Authors
MISRA NK SATI R CHOUDHARY RNP
Citation
Nk. Misra et al., PHASE-TRANSITION IN PB4.95BA0.05GE3-XSIXO11 FERROELECTRIC, Indian Journal of Pure & Applied Physics, 34(2), 1996, pp. 96-100
Citations number
22
Categorie Soggetti
Physics
Journal title
Indian Journal of Pure & Applied Physics → ACNP
ISSN journal
00195596
Volume
34
Issue
2
Year of publication
1996
Pages
96 - 100
Database
ISI
SICI code
0019-5596(1996)34:2<96:PIPF>2.0.ZU;2-F
Abstract
Polycrystalline samples of Pb4.95Ba0.05Ge3-xSixO11 (x = 0.3, 0.6, 1.00 ) have been prepared by high-temperature solid-state-reaction techniqu e. X-ray powder diffraction method has been used to check the formatio n of the compounds. Studies of dielectric permittivity and loss have b een carried out both as a function of frequency (10(2) to 10(4) Hz) an d temperature (-180 to 200 degrees C) for different concentrations of silicon as dopant. It has been observed that the ferroelectric phase t ransition temperature T-c decreases with the increase of silicon conce ntration.