H. Horibe et al., THE EFFECT OF DISSOLUTION INHIBITORS ON T HE DISSOLUTION CHARACTERISTICS OF A CHEMICALLY AMPLIFIED 3-COMPONENT POSITIVE RESIST, Kobunshi ronbunshu, 53(1), 1996, pp. 57-62
For chemically amplified electron beam (EB) resists composed of partia
lly tert-butoxycarbonyl(tBOC)-protected poly(p-vinylphenol) (PVP), a d
issolution inhibitor, and an acid generator, effects of the dissolutio
n inhibitors on the dissolution characteristics of the resist are inve
stigated. The dissolution inhibitors become dissolution promoters afte
r exposure. We tried to increase the dissolution rate of the resist in
the exposed area using dissolution promoters. We estimated the dissol
ution rate by using a model-composition resist which consisted of PVP
as the matrix resin and benzoic acid derivatives as dissolution promot
ers. We evaluated the relationships between the acidity of benzoic aci
d derivatives and the dissolution rate of the model-composition resist
s. The higher the concentration of the benzoic acid derivatives is, th
e higher the dissolution rate of the model-composition resist. The dis
solution rate of the model-composition resist increases linearly with
the increase in acidity of the dissolution promoter. A dissolution pro
moter with high acidity increases the dissolution rate of a resist in
the exposed area.