APPLICATION OF A SYNCHROTRON MICROPROBE TO THE ANALYTICAL CHARACTERIZATION OF ION-IMPLANTED MATERIAL

A synchrotron microprobe has been used to characterize ion implantatio ns of nickel and cobalt in silicon [100] or [111] wafers. The synchrot ron radiation is collimated by means of a rigid cylindrical glass capi llary of 110 mm length, 5 mm outer and 30 mu m or 10 mu m inner diamet er. The beam is pointed at the wafer sample and the emitted radiation of X-rays is detected by an energy dispersive spectrometer. Line scans are recorded step by step over the implantation areas and across thei r borders. The sharpness of the borders is characterized at a lateral resolution of 13 mu m and the edge lengths ranging from 0.6 to 8 mm ar e determined with an accuracy better than +/- 20 mu m. The signal inte nsity and implantation dose of cobalt ranging from 1 x 10(15) to 1 x 1 0(17) ions cm(-2) show a linear relationship as is to be expected for the micrometre thin implanted layers.