MOLECULAR-BASIS OF CHARGE MOVEMENT IN VOLTAGE-GATED SODIUM-CHANNELS

Citation
Nb. Yang et al., MOLECULAR-BASIS OF CHARGE MOVEMENT IN VOLTAGE-GATED SODIUM-CHANNELS, Neuron, 16(1), 1996, pp. 113-122
Citations number
40
Categorie Soggetti
Neurosciences
Journal title
NeuronACNP
ISSN journal
08966273
Volume
16
Issue
1
Year of publication
1996
Pages
113 - 122
Database
ISI
SICI code
0896-6273(1996)16:1<113:MOCMIV>2.0.ZU;2-M
Abstract
Voltage-dependent movement of a sodium channel S4 segment was examined by cysteine scanning mutagenesis and testing accessibility of the res idues to hydrophilic cysteine-modifying reagents. These experiments in dicate that 2 charged S4 residues move completely from an internally a ccessible to an externally accessible location in response to depolari zation by passage through a short ''channel'' in the protein. The ener getic problems of S4 movement have thus been solved in the same way th at many ion channels achieve highly selective and rapid ion permeation through an open pore, by restricting the contact region between the p ermion and its channel.