ELECTRICAL-PROPERTIES OF BORON-NITRIDE THIN-FILMS GROWN BY NEUTRALIZED NITROGEN ION-ASSISTED VAPOR-DEPOSITION

Boron nitride (BN) thin films (containing mixed cBN/hBN phase) have be en deposited on Si(100) substrates using neutralized nitrogen beam and electron beam evaporation of boron. All as-deposited BN films were p type with a room-temperature carrier concentration in the range of 5 X 10(16) to 1 X 10(17) cm(-3). The Mg-doped BN films showed carrier con centrations in the range of 1.2 X 10(18) cm(-3) to 5.2 X 10(18) cm(-3) when the Mg cell temperature was varied from 250 to 500 degrees C. Th e films were analyzed for both majority elements (B and N) and dopant/ impurity (Si, Mg, Fe, etc.) incorporation using secondary ion mass spe ctroscopy and mass spectroscopy of recoiled ions (MRSI). MRSI is shown to be superior for dopant characterization of boron nitride thin film s. (C) 1996 American Institute of Physics.