CONVERSION OF STEP CONFIGURATION INDUCED BY STRAIN IN SI1-XGEX LAYERSDEPOSITED ON VICINAL SI(001) SURFACE

Authors
ZHOU JM GUO LW CUI Q PENG CS HUANG Q
Citation
Jm. Zhou et al., CONVERSION OF STEP CONFIGURATION INDUCED BY STRAIN IN SI1-XGEX LAYERSDEPOSITED ON VICINAL SI(001) SURFACE, Applied physics letters, 68(5), 1996, pp. 628-630
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
5
Year of publication
1996
Pages
628 - 630
Database
ISI
SICI code
0003-6951(1996)68:5<628:COSCIB>2.0.ZU;2-4
Abstract
Reflection high energy electron diffraction (RHEED) intensity measurem ents reveal that the strain in a Si1-xGex layer on a vicinal Si(001) s urface converts a (1 X 2) domain dominated step configuration to a (2X 1) domain dominated one. The dependence of the effect on the Ge conten t is similar to the dependence of the critical thickness of the pseudo morphic growth of Si1-xGex layers on Ge content. No conversion effect has been observed on exact Si(001) substrates. (C) 1996 American Insti tute of Physics.