We report the fabrication and characterization of a p-type porous sili
con/ n-type hydrogenated amorphous silicon (a-Si:H) pn-heterojunction
electroluminescent device structure. The devices exhibit electrolumine
scence in forward bias, demonstrating minority carrier injection from
n-type a-Si:H into p-type porous silicon. (C) 1996 American Institute
of Physics.