EMERGENCE OF DEEP LEVELS IN N-TYPE ZNSE UNDER HYDROSTATIC-PRESSURE

Photoluminescence is measured in n-type ZnSe doped with Ga and Cl unde r pressures to 100 kbar (at 7 K). For each dopant, the rate of pressur e shift of the self-activated band changes at 25-30 kbar from faster t han to slower than that of the band gap. The change is evidence that a previously unknown deep donorlike state emerges from the electron con tinuum. This state probably is related to zinc vacancy-donor complexes , whose levels move lower in the gap with compression.