RESISTIVE UPPER CRITICAL-FIELD OF HIGH-T-C SINGLE-CRYSTALS OF BI2SR2CACU2O8

Citation
As. Alexandrov et al., RESISTIVE UPPER CRITICAL-FIELD OF HIGH-T-C SINGLE-CRYSTALS OF BI2SR2CACU2O8, Physical review letters, 76(6), 1996, pp. 983-986
Citations number
19
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
76
Issue
6
Year of publication
1996
Pages
983 - 986
Database
ISI
SICI code
0031-9007(1996)76:6<983:RUCOHS>2.0.ZU;2-6
Abstract
The upper critical field H-c2(T) of Bi2Sr2CaCu2O8 crystals with T-c > 92 K has been measured from the out-of-plane resistivity in magnetic f ields (H perpendicular to ab) up to 15 T. By the use of the empirical procedure the H-c2(T) curve has been extrapolated up to H-c2 similar o r equal to 230 T and T/T-c similar or equal to 0.35 which is independe nt of the choice of the R/R(N) ratio. We found that H-c2(T) does not f ollow the conventional theory with or without fluctuations but is cons istent with the prediction based on the Bose-Einstein condensation of charged bosons formed above T-c. Our results together with the heat ca pacity measurements provide an evidence for the possibility of 2e Bose liquid ground state of high-T-c oxides.