CHARGE-CARRIER RECOMBINATION AND DIFFUSION IN INGAAS(P) EPITAXIAL LAYERS

Authors
JUODKAZIS S PETRAUSKAS M QUACHA A WILLANDER M
Citation
S. Juodkazis et al., CHARGE-CARRIER RECOMBINATION AND DIFFUSION IN INGAAS(P) EPITAXIAL LAYERS, Physica status solidi. a, Applied research, 140(2), 1993, pp. 439-443
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
140
Issue
2
Year of publication
1993
Pages
439 - 443
Database
ISI
SICI code
0031-8965(1993)140:2<439:CRADII>2.0.ZU;2-4
Abstract
The method of picosecond light-induced grating is used for the investi gation of non-equilibrium charge carrier dynamics in epitaxial layers of InGaAsP, InGaAs and InP. The carrier recombination time tau(R) and the diffusion coefficient D(a) are determined. The influence of bleach ing on the revealed values is discussed.