VPE OF THE HG1-XCDXTE OHMIC CONTACT LAYERS ON P-CDTE

Hg1-xCdxTe ohmic contact layers are grown on p-CdTe bulk samples by VP E using a Hg0.2Te0.8 melt solution as a source at T = 450 to 600-degre es-C and t = 0.5 to 8 h. It is shown that thin (r < 10 mum) layers wit h a sharp interface and a gapless composition (x < 0.18) over the main part of their thickness can be obtained at T < 550-degrees-C and t > 1 h. The PL spectra of p-CdTe samples in the edge emission range at 4. 2 K are investigated. The VPE process is found to reduce the V(Cd) con centration and to improve the uniformity of the PL spectral distributi on over the samples volume.