ELECTRON-MICROSCOPY AND MASS-SPECTROMETRY STUDY IN IN0.72GA0.28AS0.62P0.38 LASERS GROWN BY LIQUID-PHASE EPITAXY

Authors
LUYTEN W VOLKOV VV VANLANDUYT J AMELINCKX S FERAUGE C GIJBELS R VASILEV MG SHELYAKIN AA LAZAREV VB
Citation
W. Luyten et al., ELECTRON-MICROSCOPY AND MASS-SPECTROMETRY STUDY IN IN0.72GA0.28AS0.62P0.38 LASERS GROWN BY LIQUID-PHASE EPITAXY, Physica status solidi. a, Applied research, 140(2), 1993, pp. 453-462
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
140
Issue
2
Year of publication
1993
Pages
453 - 462
Database
ISI
SICI code
0031-8965(1993)140:2<453:EAMSII>2.0.ZU;2-X
Abstract
Broad area as well as buried heterostructure lasers based on In0.72Ga0 .28As0.62P0.38/InP and emitting at 1.3 mum are grown by liquid phase e pitaxy and are studied in detail by means of transmission electron mic roscopy, X-ray diffraction, secondary ion mass-spectrometry, and elect roluminescence. The InGaAsP epilayer is found to be well lattice-match ed and of good structural quality. A tentative explanation is presente d for the spinodal decomposition observed in the InGaAsP alloy. We als o report on the high performance characteristics of the infrared laser s.