PROPERTIES OF CDTE SOLAR-CELLS ELECTROCHEMICALLY PREPARED FROM SINGLE-CRYSTALS

Optoelectrical properties of junctions electrochemically formed on the surface of n-type CdTe single crystals are reported. The carrier tran sport process across the junction is controlled by tunnelling through the barrier from one side and by thermal emission followed by recombin ation at interface states from the opposite side of the junction. The C-U characteristics have the shape typical for abrupt junctions and th e built-in potential U(D) = 1.1 V confirms the formation of an n-p hom ojunction covered by a thin Te film. The photovoltaic parameters of th ese cells are: open-circuit voltage 0.42 V, short-circuit current dens ity 0.5 to 0.8 mA/cm2, and fill factor 0.54. The spectral response ind icates that the thin layer of Te acts only as an optical filter.