INP-BASED DEVICES AND THEIR APPLICATIONS FOR MERGED FET-HBT TECHNOLOGIES

Authors
PARIKH P KIZILOGLU K MONDRY M CHAVARKAR P KELLER B DENBAARS S MISHRA U
Citation
P. Parikh et al., INP-BASED DEVICES AND THEIR APPLICATIONS FOR MERGED FET-HBT TECHNOLOGIES, Microwave and optical technology letters, 11(3), 1996, pp. 121-125
Citations number
12
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
11
Issue
3
Year of publication
1996
Pages
121 - 125
Database
ISI
SICI code
0895-2477(1996)11:3<121:IDATAF>2.0.ZU;2-X
Abstract
We report a merged n-HJFET/Pnp-HBT technology for high-speed circuits. This technology is based upon using the p(+) junction gate of the n-H JFET as the emitter of the Pnp-HBT. The channel of the FET is used as the base and the p-buffer functions as the collector facilitating the fabrication of both devices from the same epilayer structure. (C) 1996 John Wiley & Sons, Inc.