MICROWAVE PERFORMANCE OF INP-BASED HEMTS FOR LOW-VOLTAGE APPLICATION

Usually high power gain is achieved at the expense of reduced f(t). In this investigation a high f(max)/f(t) ratio of 26 is obtained in comb ination with a f(t) L(g) product of 39 GHz mu m, equivalent to an ef fective velocity of 2.45 10(7) cm/s. Despite a relaxed gate length o f approximately 0.5 mu m, these features were obtained at low drain bi as of V-d = 1.5 V. (C) 1996 John Wiley & Sons, Inc.