KINETIC-STUDY OF WSIX-CVD PROCESSES - A COMPARISON OF WF6 SIH4 AND WF6/SI2H6 REACTION SYSTEMS/

Kinetic study on chemical vapor deposition Of tungsten silicide (CVD-W Six) by the mixture of WF6/SiH4 or WF6/Si2H6 was made using an externa lly heated tubular reactor. By investigating the effect of the film pr ecipitation area on the gas phase volume ratio(the SN ratio) in film f ormation, it can be concluded that the initial step of film precipitat ion was dominated by radical chain reaction. In addition, a new proces s. to form WSix using preliminary excitation of gas phase reaction at the inlet of the reactor was proposed. Using this process, film compos ition was controlled and the formation of WSi2.5 films with excellent step coverage was realized.