TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-RESISTIVITY OF Y3CO11B4 AND GD3CO11B4 COMPOUNDS

The temperature dependence of the electrical resistivity rho of R(3)Co (11)B(4) (R = Y and Gd) in the temperature range from 4.2 to 370 K is presented. These compounds crystallize in the Ce3Co11B4-type structure . The unit cell of the structure contains 18 atoms. The ran earth atom s are distributed in two different crystallographic sites, the Co atom s in three different positions, and boron is located in one type of si te. Ln the low-temperature region rho is proportional to T-2. This qua dratic dependence is caused by electron-spin wave scattering. The expe rimental results are compared with transport properties of other rare earth-transition metal compounds.