BEAM-INDUCED DEPOSITION OF AN ULTRAVIOLET TRANSPARENT SILICON-OXIDE FILM BY FOCUSED GALLIUM ION-BEAM

We have deposited a silicon oxide (SiOx) film with a high optical tran smittance in the DUV region by a focused ion beam induced deposition t echnique using a gallium ion beam and a mixture of oxygen and TMCTS(1, 3,5,7-tetramethylcyclotetrasiloxane) as a source gas, The optical tran smittance of a 0.3 mu m thick film is higher than 90% at the wavelengt h of 250 nm, The transmittance of the deposited SiOx film depends on b oth the source gas and ion beam irradiation conditions. A scaling to e xplain the transmittance along with the ion beam conditions is propose d, (C) 1996 American Institute of Physics.