MACROPOROUS SILICON WITH A COMPLETE 2-DIMENSIONAL PHOTONIC BAND-GAP CENTERED AT 5 MU-M

We have fabricated a two-dimensional photonic band structure based on macroporous silicon with a gap common to both polarizations and center ed at 5 mu m. A triangular lattice of circular air rods with a lattice constant of 2.3 mu m was etched 75 mu m deep in an n-type silicon sub strate by electrochemical pore formation in hydrofluoric acid. The por ous layer was then micromechanically structured in such a way that 200 mu m thick free-standing bars of porous material were left over on th e silicon substrate. These bars were then used for measuring the trans mission of the photonic lattice. The results showed an excellent agree ment with the theoretically calculated structure. (C) 1996 American In stitute of Physics.