UNCONGRUENT LASER-ABLATION AND ELECTROLESS METALLIZATION OF SIC

Experimental results on the ablation of a SiC single crystal in air un der irradiation with a XeCl excimer laser beam are presented. XPS anal ysis reveals the Si enrichment of the ablated areas under an energy de nsity of the laser beam of 1 to 3.5 J/cm(2) and the formation of SiOx in the ablated areas. The nonstoichiometric ablation of SiC allows one to activate selectively the SiC surface for metal deposition from an electroless plating solution. Both Ni and Cu deposits show a good adhe rence to the SiC surface (up to 0.5 N/mm(2)). Similar results are obse rved with SiC ceramics with a better adherence of the electroless meta l deposit. The adherence of the deposit to the ablated SiC samples inc reases upon HF treatment. (C) 1996 American Institute of Physics.