CALCULATION OF THE FRACTIONAL INTERSTITIAL COMPONENT OF BORON-DIFFUSION AND SEGREGATION COEFFICIENT OF BORON IN SI0.8GE0.2

Investigation of boron diffusion in strained silicon germanium buried layers reveals a fractional interstitial component of boron diffusion (f(BI)) in Se0.8Ge0.2 approximately equal to the f(BI) value in silico n. In conjunction with computer-simulated boron profiles, the results yield an absolute lower-bound of f(BI) in Si0.8Ge0.2 of similar to 0.8 . In addition, the experimental methodology provides a unique vehicle for measuring the segregation coefficient; oxidation-enhanced diffusio n is used instead of an extended, inert anneal to rapidly diffuse the dopant to equilibrium levels across the interface, allowing the segreg ation coefficient to be measured more quickly. (C) 1996 American Insti tute of Physics.