EXCITATION POWER AND BARRIER WIDTH DEPENDENCE OF PHOTOLUMINESCENCE INPIEZOELECTRIC MULTIQUANTUM-WELL P-I-N STRUCTURES

Strained InGaAs/GaAs multiquantum well (MQW) structures grown on (111) B GaAs substrates incorporate strong internal piezoelectric fields. In contrast to (100)-oriented MQW p-i-n structures, the room temperature photoluminescence (PL) peak position and lineshape depend on the barr ier width. which controls the ''envelope field'' across the MQW. The c omplex behavior of the PL peak position with excitation power results from a competition between screening of the well and envelope fields, and the photovoltaic effect. (C) 1996 American Institute of Physics.