EPITAXIAL-GROWTH OF ZINCBLENDE ZNSE MGS SUPERLATTICES ON (001)GAAS/

Citation
K. Uesugi et al., EPITAXIAL-GROWTH OF ZINCBLENDE ZNSE MGS SUPERLATTICES ON (001)GAAS/, Applied physics letters, 68(6), 1996, pp. 844-846
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
6
Year of publication
1996
Pages
844 - 846
Database
ISI
SICI code
0003-6951(1996)68:6<844:EOZZMS>2.0.ZU;2-E
Abstract
We report the growth of zinc-blende ZnSe/MgS superlattices (SLs) on Ga As (001) substrates. The SLs were grown with metalorganic vapor phase epitaxy by selecting appropriate precursors for Mg and S. MgS naturall y forms rocksalt structures, but zinc-blende MgS layers were grown, Th e lattice constant of MgS was estimated to be 5.59 Angstrom, X-ray dif fraction measurements show that the ZnSe/MgS SLs are grown coherently to the GaAs substrates up to the total thicknesses of similar to 3000 Angstrom. (C) 1996 American Institute of Physics.