GRAPHITIZATION of diamond at ambient pressure,vas first observed in th
e 1920s(1,2), but the mechanisms responsible for this transformation a
nd, in particular, those underlying the nucleation and growth of graph
ite in diamond, remain controversial(3-5). In addition to their fundam
ental interest, these processes have technological relevance-for examp
le, for the growth by chemical vapour deposition(6) of diamond-like fi
lms, which sometimes include graphitic islands(7), Here we report the
results of first-principles molecular dynamics simulations of a surfac
e-induced diamond-to-graphite transition, which provide a microscopic
model for the early stages of the graphitization process, We find that
a well defined diamond/graphite interface forms during the transition
; the electronic properties of the atoms at this interface suggest tha
t they are highly chemically active sites. In addition to its relevanc
e to graphite inclusion in diamond films, our model should yield insig
ht into the process of selective etching in vapour-deposited carbon fi
lms, and possibly also into diamond nucleation.