SPECTROELLIPSOMETRIC INVESTIGATION OF LPCVD POLYSILICON - AS DEPOSITED AND AFTER HYDROGENATION

Authors
FLUERARU C GARTNER M DASCALU D ROTARU C
Citation
C. Flueraru et al., SPECTROELLIPSOMETRIC INVESTIGATION OF LPCVD POLYSILICON - AS DEPOSITED AND AFTER HYDROGENATION, Journal de physique. III, 6(2), 1996, pp. 225-235
Citations number
19
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
6
Issue
2
Year of publication
1996
Pages
225 - 235
Database
ISI
SICI code
1155-4320(1996)6:2<225:SIOLP->2.0.ZU;2-U
Abstract
Polycrystalline silicon deposited at 570 degrees C and 620 degrees C t emperature, as-deposited and after hydrogenation, was investigated by spectroellipsometry. The behaviour of refractive and absorption index versus wavelength is presented. The paper also includes evaluation of the surface roughness and the crystallinity fraction of polysilicon vi a Bruggeman-Effective Medium Approximation. An attempt to evaluate the first two direct interband transitions from spectroellipsometric spec trum and comparison with other measurements is reported.