HOT-ELECTRON LIGHT-EMITTING AND LASING SEMICONDUCTOR HETEROSTRUCTURES- TYPE-1

A new light-emitting device has been proposed based on the incorporati on of a GaAs quantum well on the n-side, and in the depletion region, of a Ga(1-x)A1(x)As p-n junction, where the bias is applied parallel t o the layers. Light is emitted when electrons and holes on the n- and p-side of the structure, respectively, heated by the applied longitudi nal electric field, transfer to the quantum well, by resonant tunnelli ng and thermionic emission (electrons) and diffusion (holes), where th ey recombine radiatively. The intensity of the light emitted is indepe ndent of the polarity of the applied bias. A demonstration of the devi ce is presented and it is shown that the quantum well needs to be in t he depletion region for light emission to occur. The device is modelle d theoretically by solving the Schrodinger's and Poisson's equations s elf-consistently by including the carrier dynamics for hot electrons a nd holes. (C) 1995 Academic Press Limited