SUB-HALF-MICROMETER WIDTH 2-D MESFET

Two-dimensional (2-D) MESFET's having sub-half-micron channel widths h ave been fabricated on double-delta-doped Al0.24Ga0.76As/In0.18Ga0.82A s/GaAs heterostructures, The 2-D MESFET operates like a normal transis tor at room temperature but uses very few electrons in the channel (ab out 500 at peak current and 5 at threshold), Also, the Narrow Channel Effect (NCE) and Drain-Induced Barrier Lowering (DIBL) (two effects wh ich limit the minimum power operation in conventional devices) have be en practically eliminated, The 0.4 micron wide device had an ON/OFF cu rrent ratio of 10(5), a peak transconductance of 100 mS/mm, a threshol d voltage of 0.3 V, a saturation voltage of 0.2 V, and a subthreshold ideality factor of 1.1, The 2-D MESFET DCFL inverter had a switching v oltage and noise margin of 0.35 V and 0.26 V, respectively, at 0.8 V s upply, These room temperature results suggest that the 2-D MESFET is a n excellent candidate for future low power digital electronics applica tions.