A NOVEL INALAS INGAAS 2-TERMINAL REAL-SPACE TRANSFER DIODE/

Authors
SU JS HSU WC LIN YS LIN W WU CL TSAI MS WU YH
Citation
Js. Su et al., A NOVEL INALAS INGAAS 2-TERMINAL REAL-SPACE TRANSFER DIODE/, IEEE electron device letters, 17(2), 1996, pp. 43-45
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
17
Issue
2
Year of publication
1996
Pages
43 - 45
Database
ISI
SICI code
0741-3106(1996)17:2<43:ANII2R>2.0.ZU;2-U
Abstract
We report two-terminal real-space transfer diode (RSTD) using InAlAs/I nGaAs heterojunction grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). By virtue of nonalloyed ohmic contacts as well as a sewer layer which is electrically separated from ohmic electrode s, a carrier density modulation and a strong negative differential res istance can be obtained, The peak-to-valley current ratio up to 140 00 0 (1x10(6)) at 300 (77) K are, to our knowledge, among the best for In AlAs/InGaAs structures, The proposed device also reveals sharp charge injection and broad valley range.