INAS ALSB/GASB RESONANT INTERBAND TUNNELING DIODES AND AU-ON-INAS/ALSB-SUPERLATTICE SCHOTTKY DIODES FOR LOGIC-CIRCUITS/

Integrated resonant interband tunneling (RIT) and Schottky diode struc tures, based on the InAs/GaSb/AlSb heterostructure system, are demonst rated for the first time, The RIT diodes are advantageous for logic ci rcuits due to the relatively low bias voltages (similar to 100 mV) req uired to attain peak current densities in the mid-10(4) A/cm(2) range. The use of n-type InAs/AlSb superlattices for the semiconducting side of Schottky barrier devices provides a means for tailoring the barrie r height for a given circuit architecture, The monolithically integrat ed RIT/Schottky structure is suitable for fabrication of a complete di ode logic family (AND, OR, XOR, INV).